1
Silicon MOS FETs (Small Signal)
unit: mm
1: Gate JEDEC: TO-236
2: Source EIAJ: SC-59
3: Drain Mini Type Package (3-pin)
2.8
+0.2
–0.3
1.5
+0.25
–0.050.65±0.15 0.65±0.15
3
1
2
0.95
0.95
1.9±0.2
0.4
+0.1 –0.05
1.1
+0.2 –0.1
0.8
0.4±0.2
0 to 0.1
0.16
+0.1 –0.06
1.45
0.1 to 0.3
2.9
+0.2 –0.05
Marking Symbol: 4V
2SK1228
Silicon N-Channel MOS FET
For switching
n Features
l High-speed switching
l Wide frequency band
l Incorporating a built-in gate protection-diode
l Allowing 2.5V drive
n Absolute Maximum Ratings (Ta = 25°C)
Parameter
Drain to Source voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
DS
V
GSO
I
D
I
DP
P
D
T
ch
T
stg
Ratings
50
10
50
100
150
150
- 55 to +150
Unit
V
V
mA
mA
mW
°C
°C
n Electrical Characteristics (Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time
Turn-off time
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
*
1
| Y
fs
|
C
iss
C
oss
C
rss
t
on
*
2
t
off
*
2
Conditions
V
DS
= 20V, V
GS
= 0
V
GS
= 10V, V
DS
= 0
I
D
= 10m A, V
GS
= 0
I
D
= 100m A, V
DS
= 5V
I
D
= 10mA, V
GS
= 2.5V
I
D
= 10mA, V
DS
= 5V, f = 1kHz
V
DS
= 5V, V
GS
= 0, f = 1MHz
V
DD
= 5V, V
GS
= 0 to 2.5V, R
L
= 470W
V
DD
= 5V, V
GS
= 2.5 to 0V, R
L
= 470W
min
50
0.5
20
typ
100
0.8
27
39
4.5
4.1
1.2
0.2
0.2
Unit
m A
m A
V
V
W
mS
pF
pF
pF
m s
m s
max
1
1
1.1
50
*
1
Pulse measurement
*
2
t
on
, t
off
measurement circuit
V
out
V
DD
= 5V
V
GS
= 2.5V
50W
470W
100
m
F
V
in
90%
10%
10%
90%
V
out
t
on
t
off