2SK1192
器件描述:MOSFET
文件大小:33.9KB,共1页
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器件资料摘要:
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS 60 V(BR) DSS 60 V ID = 250µA, VGS = 0VV
VGSS ±20 IGSS ±500 nA VGS = ±20VV
ID ±40 IDSS 250 µAVDS = 60V, VGS = 0VA
ID (pulse)
(Ta = 25ºC) (Ta = 25ºC)
VTH 2.0 4.0 V VDS = 10V, ID = 250µAA
PD 90 (Tc = 25ºC) Re (yfs) 13 20 S VDS = 10V, ID = 20AW
EAS 38 RDS (on) 0.021 0.028 Ω VGS = 10V, ID = 20AmJ
Tch 150
*
: VDD = 25V, L = 50µH, IL = 30A, unclamped,
See Figure 1 on Page 5.
Ciss 2500 pF
VDS = 25V, f = 1.0MHz,
VGS = 0V
ID = 20A, VDD = 30V,
VGS = 10V,
See Figure 2 on Page 5.
ºC
Tstg –55 to +150 Coss 1200 pFºC
ton 260 ns
toff 120 ns
Symbol Unit Conditions
Ratings
typ maxmin
22
*
045
V 5VGS =
6V
5.5V
V 10VGS =
0
0
10 20 40
10
20
30
40
–50
0
0 50 100 150
10
20
30
40
51020
V 10VDS =
0.05
0.3
0.1 0.5 1 50
0.5
5
10
50
V 10VDS =
25ºC
125ºC
0
100
10 20 30 40 50
500
1000
5000
10000
V 0VGS
=f 1MHz
=
Ciss
Coss
Crss
0 0.2 0.4 0.6 0.8 1.4
V 0VGS =
5V
0246810
0
1
2
I 40AD =
I 20AD =
V 10VGS =
I 20AD =
T 55ºCC = –
0.5 1 5 10 50 100
1
5
10
50
100
200
ID (pulse) max
DI max
1ms
100
µ
s
DC OPERATION
10ms (1shot)
0
10
50
80
90
0 50 100 150
LIMITED
With infinite heatsink
Without heatsink
70
60
40
30
20
40
25
15
0
35
30
20
10
5
40
25
15
0
35
30
20
10
5
40
25
15
0
35
30
20
10
5
123
10V
25ºC
125ºC
T 55ºCC = –
30
1
510
1.0 1.2
10V
2SK1192
External dimensions 2 ...... FM100
±160 (Tch 150ºC)
(Tc=25ºC)
R
DS
(ON)
(m
Ω
) R
DS
(ON)
(m
Ω
)
Re
(yfs)
(S)
Capacitance (pF)
Ta (ºC)
V
DS
(V)
VDS — ID Characteristics
ID — Re (yfs) Characteristics
VDS — Capacitance Characteristics VSD — IDR Characteristics Ta — PD CharacteristicsSafe Operating Area
VGS — VDS Characteristics TC — RDS (ON) Characteristics
VGS — ID Characteristics ID — RDS (ON) Characteristics
VDS (V)VDS (V) VSD (V)
I
DR
(A)
I
D
(A)
P
D
(W)
Tc (ºC)VGS (V)ID (A)
VGS (V)VDS (V) ID (A)
I
D
(A)
I
D
(A)
R
DS (ON)