1
Silicon Junction FETs (Small Signal)
unit: mm
2SK1103
Silicon N-Channel Junction FET
For switching
Complementary to 2SJ163
n Features
l Low ON-resistance
l Low-noise characteristics
1: Source JEDEC: TO-236
2: Drain EIAJ: SC-59
3: Gate Mini Type Package (3-pin)
n Absolute Maximum Ratings (Ta = 25°C)
Parameter
Gate to Drain voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
GDS
I
D
I
G
P
D
T
ch
T
stg
Ratings
- 65
20
10
150
150
- 55 to +150
Unit
V
mA
mA
mW
°C
°C
n Electrical Characteristics (Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
Forward transfer admittance
Drain to Source ON-resistance
Input capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Symbol
I
DSS
*
I
GSS
V
GDS
V
GSC
| Y
fs
|
R
DS(on)
C
iss
C
rss
Conditions
V
DS
= 10V, V
GS
= 0
V
GS
= - 30V, V
DS
= 0
I
G
= - 10m A, V
DS
= 0
V
DS
= 10V, I
D
= 10m A
V
DS
= 10V, I
D
= 1mA, f = 1kHz
V
DS
= 10mV, V
GS
= 0
V
DS
= 10V, V
GS
= 0, f = 1MHz
min
0.2
- 65
1.8
max
6
- 10
- 3.5
Unit
mA
nA
V
V
mS
W
pF
pF
*
I
DSS
rank classification
Marking Symbol (Example): 4L
2.8
+0.2
–0.3
1.5
+0.25
–0.050.65±0.15 0.65±0.15
3
1
2
0.95
0.95
1.9±0.2
0.4
+0.1 –0.05
1.1
+0.2 –0.1
0.8
0.4±0.2
0 to 0.1
0.16
+0.1 –0.06
1.45
0.1 to 0.3
2.9
+0.2 –0.05
typ
- 1.5
2.5
300
7
1.5
Runk
I
DSS
(mA)
Marking Symbol
O
0.2 to 1
4LO
P
0.6 to 1.5
4LP
Q
1 to 3
4LQ
R
2.5 to 6
4LR