2SK1083-MR
N-channel MOS-FET
F-III Series 60V 0,22Ω 8A 20W
> Features > Outline Drawing
- High Current
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- High Forward Transconductance
> Applications
- Motor Control
- General Purpose Power Amplifier
- DC-DC converters
> Maximum Ratings and Characteristics > Equivalent Circuit
- Absolute Maximum Ratings (T C =25°C), unless otherwise specified
Item Symbol Rating Unit
Drain-Source-Voltage V
DS
60 V
Continous Drain Current I
D
8 A
Pulsed Drain Current I
D(puls)
32 A
Continous Reverse Drain Current I
DR
8 A
Gate-Source-Voltage V
GS
±20 V
Max. Power Dissipation P
D
20 W
Operating and Storage Temperature Range T
ch
150 °C
T
stg
-55 ~ +150 °C
- Electrical Characteristics (T
C
=25°C), unless otherwise specified
Item Symbol Test conditions Min. Typ. Max. Unit
Drain-Source Breakdown-Voltage V
(BR)DSS
I
D
=1mA V
GS
=0V 60 V
Gate Threshhold Voltage V
GS(th)
I
D
=1mA V
DS=
V
GS
1,0 1,5 2,5 V
Zero Gate Voltage Drain Current I
DSS
V
DS
=60V T
ch
=25°C 10 500 µA
V
GS
=0V T
ch
=125°C 0,2 1,0 mA
Gate Source Leakage Current I
GSS
V
GS
=±20V V
DS
=0V 10 100 nA
Drain Source On-State Resistance R
DS(on)
I
D
=4A V
GS
=4V 0,22 0,35 Ω
I
D
=4A V
GS
=10V 0,15 0,22 Ω
Forward Transconductance g
fs
I
D
=4A V
DS
=25V 3 6 S
Input Capacitance C
iss
V
DS
=25V 300 450 pF
Output Capacitance C
oss
V
GS
=0V 110 170 pF
Reverse Transfer Capacitance C
rss
f=1MHz 40 60 pF
Turn-On-Time t
on
( t
on
=t
d(on)
+t
r
) t
d(on)
V
CC
=30V 7 10 ns
t
r
I
D
=8A 30 45 ns
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
) t
d(off)
V
GS
=10V 50 75 ns
t
f
R
GS
=25 Ω 20 30 ns
Diode Forward On-Voltage V
SD
I
F
=2xI
DR
V
GS
=0V T
ch
=25°C 1,2 1,8 V
Reverse Recovery Time t
rr
I
F
=I
DR
V
GS
=0V 50 ns
-dI
F
/d t =100A/µs T
ch
=25°C
- Thermal Characteristics
Item Symbol Test conditions Min. Typ. Max. Unit
Thermal Resistance R
th(ch-a)
channel to air 62,5 °C/W
R
th(ch-c)
channel to case 6,25 °C/W
FUJI ELECTRIC GmbH; Lyoner Straße 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90 29-56