2SJ647
器件资料摘要：
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
2SJ647
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No. D16530EJ1V0DS00 (1st edition)
Date Published January 2003 NS CP(K)
Printed in Japan
2003
DESCRIPTION
The 2SJ647 is a switching device which can be driven directly
by a 2.5 V power source.
The 2SJ647 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
FEATURES
• 2.5 V drive available
• Low on-state resistance
RDS(on)1 = 1.45 Ω MAX. (VGS = −4.5 V, ID = −0.2 A)
RDS(on)2 = 1.55 Ω MAX. (VGS = −4.0 V, ID = −0.2 A)
RDS(on)3 = 2.98 Ω MAX. (VGS = −2.5 V, ID = −0.15 A)
ORDERING INFORMATION
PART NUMBER PACKAGE
2SJ647 SC-70 (SSP)
Remark Marking: H22
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS −20 V
Gate to Source Voltage (VDS = 0 V) VGSS
m12
V
Drain Current (DC) (TA = 25°C) ID(DC)
m0.4
A
Drain Current (pulse)
Note1
ID(pulse)
m1.6
A
Total Power Dissipation
Note2
PT 0.2 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg −55 to +150 °C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board of 2500 mm
2
x 1.1 mm.
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge.
VESD ±100 V TYP. at C = 200 pF, R = 0, Single Pulse.
PACKAGE DRAWING (Unit: mm)
2.1 ± 0.1
1.25 ± 0.1
0.65
0.3
0.65
2.0 ± 0.2
0.9 ± 0.1
0 to 0.1
0.15
+0.1 –0.05
2
1
3
+0.1 –0
0.3
+0.1 –0
0.3
Marking
1 : Source
2 : Gate
3 : Drain
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
2SJ647
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No. D16530EJ1V0DS00 (1st edition)
Date Published January 2003 NS CP(K)
Printed in Japan
2003
DESCRIPTION
The 2SJ647 is a switching device which can be driven directly
by a 2.5 V power source.
The 2SJ647 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
FEATURES
• 2.5 V drive available
• Low on-state resistance
RDS(on)1 = 1.45 Ω MAX. (VGS = −4.5 V, ID = −0.2 A)
RDS(on)2 = 1.55 Ω MAX. (VGS = −4.0 V, ID = −0.2 A)
RDS(on)3 = 2.98 Ω MAX. (VGS = −2.5 V, ID = −0.15 A)
ORDERING INFORMATION
PART NUMBER PACKAGE
2SJ647 SC-70 (SSP)
Remark Marking: H22
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS −20 V
Gate to Source Voltage (VDS = 0 V) VGSS
m12
V
Drain Current (DC) (TA = 25°C) ID(DC)
m0.4
A
Drain Current (pulse)
Note1
ID(pulse)
m1.6
A
Total Power Dissipation
Note2
PT 0.2 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg −55 to +150 °C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board of 2500 mm
2
x 1.1 mm.
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge.
VESD ±100 V TYP. at C = 200 pF, R = 0, Single Pulse.
PACKAGE DRAWING (Unit: mm)
2.1 ± 0.1
1.25 ± 0.1
0.65
0.3
0.65
2.0 ± 0.2
0.9 ± 0.1
0 to 0.1
0.15
+0.1 –0.05
2
1
3
+0.1 –0
0.3
+0.1 –0
0.3
Marking
1 : Source
2 : Gate
3 : Drain
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain