2SJ648
器件资料摘要：
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
2SJ648
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No. D16597EJ2V0DS00 (2nd edition)
Date Published November 2004 NS CP(K)
Printed in Japan
The mark shows major revised points.
2003
PACKAGE DRAWING (Unit: mm)
0.3
1.6 ± 0.1 0.8 ± 0.1
2
0.2
+0.1
–0
0.5
1: Source
2: Gate
3: Drain
0.5
1.0
1.6 ± 0.1
3
1
0.6
0.75 ± 0.05
0 to 0.1
0.15
+0.1
–0.05
+0.1
–0
DESCRIPTION
The 2SJ648 is a switching device which can be driven directly by a
2.5 V power source.
The 2SJ648 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
FEATURES
• 2.5 V drive available
• Low on-state resistance
RDS(on)1 = 1.45 Ω MAX. (VGS = −4.5 V, ID = −0.2 A)
RDS(on)2 = 1.55 Ω MAX. (VGS = −4.0 V, ID = −0.2 A)
RDS(on)3 = 2.98 Ω MAX. (VGS = −2.5 V, ID = −0.15 A)
ORDERING INFORMATION
PART NUMBER PACKAGE
2SJ648 SC-75 (USM)
Marking: H1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS −20 V
Gate to Source Voltage (VDS = 0 V) VGSS
m12
V
Drain Current (DC) ID(DC)
m0.4
A
Drain Current (pulse)
Note1
ID(pulse)
m1.6
A
Total Power Dissipation
Note2
PT 200 mW
Channel Temperature Tch 150 °C
Storage Temperature Tstg −55 to +150 °C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on ceramic substrate of 300 mm
2
x 0.64 mm.
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge.
VESD = ±100 V TYP. (C = 200 pF, R = 0 Ω, Single pulse)
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
2SJ648
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No. D16597EJ2V0DS00 (2nd edition)
Date Published November 2004 NS CP(K)
Printed in Japan
The mark shows major revised points.
2003
PACKAGE DRAWING (Unit: mm)
0.3
1.6 ± 0.1 0.8 ± 0.1
2
0.2
+0.1
–0
0.5
1: Source
2: Gate
3: Drain
0.5
1.0
1.6 ± 0.1
3
1
0.6
0.75 ± 0.05
0 to 0.1
0.15
+0.1
–0.05
+0.1
–0
DESCRIPTION
The 2SJ648 is a switching device which can be driven directly by a
2.5 V power source.
The 2SJ648 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
FEATURES
• 2.5 V drive available
• Low on-state resistance
RDS(on)1 = 1.45 Ω MAX. (VGS = −4.5 V, ID = −0.2 A)
RDS(on)2 = 1.55 Ω MAX. (VGS = −4.0 V, ID = −0.2 A)
RDS(on)3 = 2.98 Ω MAX. (VGS = −2.5 V, ID = −0.15 A)
ORDERING INFORMATION
PART NUMBER PACKAGE
2SJ648 SC-75 (USM)
Marking: H1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS −20 V
Gate to Source Voltage (VDS = 0 V) VGSS
m12
V
Drain Current (DC) ID(DC)
m0.4
A
Drain Current (pulse)
Note1
ID(pulse)
m1.6
A
Total Power Dissipation
Note2
PT 200 mW
Channel Temperature Tch 150 °C
Storage Temperature Tstg −55 to +150 °C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on ceramic substrate of 300 mm
2
x 0.64 mm.
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge.
VESD = ±100 V TYP. (C = 200 pF, R = 0 Ω, Single pulse)
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain