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©

2000, 2001
MOS FIELD EFFECT TRANSISTOR
2SJ603
SWITCHING
P-CHANNEL POWER MOS FET
DATA SHEET
Document No. D14648EJ3V0DS00 (3rd edition)
Date Published July 2002 NS CP(K)
Printed in Japan
The mark a35 shows major revised points.
DESCRIPTION
The 2SJ603 is P-channel MOS Field Effect Transistor designed
for solenoid, motor and lamp driver.
FEATURES
• Super low on-state resistance:
RDS(on)1 = 48 mΩ MAX. (VGS = −10 V, ID = −13 A)
RDS(on)2 = 75 mΩ MAX. (VGS = −4.0 V, ID = −13 A)
• Low input capacitance:
Ciss = 1900 pF TYP. (VDS = −10 V, VGS = 0 V)
• Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS −60 V
Gate to Source Voltage (VDS = 0 V) VGSS m 20 V
Drain Current (DC) (TC = 25°C) ID(DC) m 25 A
Drain Current (pulse)
Note1
ID(pulse) m 70 A
Total Power Dissipation (TC = 25°C) PT 50 W
Total Power Dissipation (TA = 25°C) PT 1.5 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg −55 to +150 °C
Single Avalanche Current
Note2
IAS −25 A
Single Avalanche Energy
Note2
EAS 62.5 mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. Starting Tch = 25°C, VDD = −30 V, RG = 25 Ω, VGS = −20 → 0 V
ORDERING INFORMATION
PART NUMBER PACKAGE
2SJ603 TO-220AB
2SJ603-S TO-262
2SJ603-ZJ TO-263
2SJ603-Z TO-220SMD

Note
Note TO-220SMD package is produced only in
Japan.
(TO-220AB)
(TO-262)
(TO-263, TO-220SMD)