2SJ588
器件描述：Silicon P Channel MOS FET High Speed Switching
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：26.13KB，共5页
Sponsor by e络盟器件资料摘要：
2SJ588
Silicon P Channel MOS FET
High Speed Switching
ADE-208-802 (Z)
1st.Edition.
June 1999
Features
• Low on-resistance
R
DS
=2.8 W typ. (V
GS
= -10 V , I
D
= -50 mA)
R
DS
=5.7 W typ. (V
GS
= -4 V , I
D
= -50 mA)
• 4 V gate drive device.
Outline
1. Source
2. Drain
3. Gate
SPAK
2
3
1
D
S
G
1
2
3
Silicon P Channel MOS FET
High Speed Switching
ADE-208-802 (Z)
1st.Edition.
June 1999
Features
• Low on-resistance
R
DS
=2.8 W typ. (V
GS
= -10 V , I
D
= -50 mA)
R
DS
=5.7 W typ. (V
GS
= -4 V , I
D
= -50 mA)
• 4 V gate drive device.
Outline
1. Source
2. Drain
3. Gate
SPAK
2
3
1
D
S
G
1
2
3