2SJ586
器件描述：Silicon P Channel MOS FET High Speed Switching
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：41.39KB，共8页
Sponsor by e络盟器件资料摘要：
2SJ586
Silicon P Channel MOS FET
High Speed Switching
ADE-208-771A (Z)
2nd.Edition.
June 1999
Features
• Low on-resistance
R
DS
= 4.1 W typ. (V
GS
= -4 V , I
D
= -50 mA)
R
DS
= 6.0 W typ. (V
GS
= -2.5 V , I
D
= -50 mA)
• 2.5 V gate drive device.
• Small package (CMPAK)
Outline
1. Source
2. Gate
3. Drain
CMPAK
2
3
1
D
S
G
1
2
3
Silicon P Channel MOS FET
High Speed Switching
ADE-208-771A (Z)
2nd.Edition.
June 1999
Features
• Low on-resistance
R
DS
= 4.1 W typ. (V
GS
= -4 V , I
D
= -50 mA)
R
DS
= 6.0 W typ. (V
GS
= -2.5 V , I
D
= -50 mA)
• 2.5 V gate drive device.
• Small package (CMPAK)
Outline
1. Source
2. Gate
3. Drain
CMPAK
2
3
1
D
S
G
1
2
3