The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
©

1998, 1999
MOS FIELD EFFECT TRANSISTOR
2SJ557
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No. D13292EJ1V0DS00 (1st edition)
Date Published June 1999 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SJ557 is a switching device which can be driven directly
by a 4 V power source.
The 2SJ557 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
FEATURES
• Can be driven by a 4 V power source
• Low on-state resistance
RDS(on)1 = 155 mΩ MAX. (VGS = –10 V, ID = –1.0 A)
RDS(on)2 = 255 mΩ MAX. (VGS = –4.5 V, ID = –1.0 A)
RDS(on)3 = 290 mΩ MAX. (VGS = –4.0 V, ID = –1.0 A)
ORDERING INFORMATION
PART NUMBER PACKAGE
2SJ557 3-pin Mini Mold (Thin Type)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage VDSS –30 V
Gate to Source Voltage VGSS –20 / +5 V
Drain Current (DC) ID(DC) ±2.5 A
Drain Current (pulse)
Note1
ID(pulse) ±10 A
Total Power Dissipation PT1 0.2 W
Total Power Dissipation
Note2
PT2 1.25 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Mounted on FR4 Board, t ≤ 5 sec.
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit : mm)
0.65
0.9 to 1.1
0 to 0.1
0.16
+0.1
–0.06
2.8 ±0.2
1.5
0.95
1 2
3
1.9
2.9 ±0.2
0.4
+0.1
–0.05
0.95
0.65
+0.1 –0.15
1 : Gate
2 : Source
3 : Drain
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Marking: XB
Gate
Drain