2SJ554
器件描述：Silicon P Channel MOS FET High Speed Power Switching
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：55.04KB，共9页
Sponsor by e络盟器件资料摘要：
2SJ554
Silicon P Channel MOS FET
High Speed Power Switching
ADE-208-628B (Z)
3rd. Edition
Jun 1998
Features
• Low on-resistance
R
DS(on)
= 0.028W typ.
• Low drive current.
• 4V gate drive devices.
• High speed switching.
Outline
TO–3P
( B U F
% S B J O
' M B O H F
4 P V S D F
1
2
3
D
G
S
Silicon P Channel MOS FET
High Speed Power Switching
ADE-208-628B (Z)
3rd. Edition
Jun 1998
Features
• Low on-resistance
R
DS(on)
= 0.028W typ.
• Low drive current.
• 4V gate drive devices.
• High speed switching.
Outline
TO–3P
( B U F
% S B J O
' M B O H F
4 P V S D F
1
2
3
D
G
S