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©

1999
MOS FIELD EFFECT TRANSISTOR
2SJ559
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DATA SHEET
Document No. D13801EJ1V0DS00 (1st edition)
Date Published June 1999 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SJ559 is a switching device which can be driven directly
by a 2.5 V power source.
The 2SJ559 has excellent switching characteristics, and is
suitable for use as a high-speed switching device in digital
circuits.
FEATURES
• Can be driven by a 2.5 V power source.
• Low gate cut-off voltage.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage VDSS –30 V
Gate to Source Voltage VGSS # 20 V
Drain Current (DC) ID(DC) # 0.1 A
Drain Current (pulse)
Note1
ID(pulse) # 0.4 A
Total Power Dissipation
Note2
PT 200 mW
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Mounted on ceramic substrate of 3.0cm
2
× 0.64 mm
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit : mm)
0.3 ± 0.05
1.6 ± 0.1 0.8 ± 0.1
G
0.2
+0.1
–0
0.5 0.5
1.0
1.6 ± 0.1
D
S
0.6
0.75 ± 0.05
0 to 0.1
0.1
+0.1
–0.05
EQUIVALENT CIRCUIT
Internal Diode
Source
Drain
Gate
Gate Protect
Diode
Marking : C1