2SJ555
器件描述：Silicon P Channel MOS FET High Speed Power Switching
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：54.29KB，共9页
Sponsor by e络盟器件资料摘要：
2SJ555
Silicon P Channel MOS FET
High Speed Power Switching
ADE-208-634A (Z)
2nd. Edition
Jun 1998
Features
• Low on-resistance
R
DS(on)
= 0.017W typ.
• Low drive current.
• 4V gate drive devices.
• High speed switching.
Outline
TO–3P
1. Gate
2. Drain
(Flange)
3. Source
1
2
3
D
G
S
Silicon P Channel MOS FET
High Speed Power Switching
ADE-208-634A (Z)
2nd. Edition
Jun 1998
Features
• Low on-resistance
R
DS(on)
= 0.017W typ.
• Low drive current.
• 4V gate drive devices.
• High speed switching.
Outline
TO–3P
1. Gate
2. Drain
(Flange)
3. Source
1
2
3
D
G
S