2SJ553L
器件描述：Silicon P Channel MOS FET High Speed Power Switching
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：57.14KB，共9页
Sponsor by e络盟器件资料摘要：
2SJ553(L),2SJ553(S)
Silicon P Channel MOS FET
High Speed Power Switching
ADE-208-650B (Z)
3rd. Edition
Jun 1998
Features
• Low on-resistance
R
DS(on)
= 0.028W typ.
• Low drive current.
• 4V gate drive devices.
• High speed switching.
Outline
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
4
1
2
3
4
LDPAK
D
G
S
Silicon P Channel MOS FET
High Speed Power Switching
ADE-208-650B (Z)
3rd. Edition
Jun 1998
Features
• Low on-resistance
R
DS(on)
= 0.028W typ.
• Low drive current.
• 4V gate drive devices.
• High speed switching.
Outline
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
4
1
2
3
4
LDPAK
D
G
S