2SJ542
器件描述：Silicon P Channel MOS FET High Speed Power Switching
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：52.91KB，共9页
Sponsor by e络盟器件资料摘要：
2SJ542
Silicon P Channel MOS FET
High Speed Power Switching
ADE-208-591B (Z)
3rd. Edition
Jun 1998
Features
• Low on-resistance
R
DS(on)
= 0.050W typ.
• Low drive current.
• 4V gate drive devices.
• High speed switching.
Outline
TO–220AB
1
2
3
1. Gate
2. Drain
(Flange)
3. Source
D
G
S
Silicon P Channel MOS FET
High Speed Power Switching
ADE-208-591B (Z)
3rd. Edition
Jun 1998
Features
• Low on-resistance
R
DS(on)
= 0.050W typ.
• Low drive current.
• 4V gate drive devices.
• High speed switching.
Outline
TO–220AB
1
2
3
1. Gate
2. Drain
(Flange)
3. Source
D
G
S