2SJ518
器件描述：Silicon P Channel MOS FET High Speed Power Switching
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：47.87KB，共9页
Sponsor by e络盟器件资料摘要：
2SJ518
Silicon P Channel MOS FET
High Speed Power Switching
ADE-208-580B (Z)
3rd. Edition
Jun 1998
Features
• Low on-resistance
R
DS(on)
= 0.35 W typ. at (V
GS
= –10V, I
D
= –1A)
• Low drive current
• 4 V gete drive devices
• High speed switching
Outline
1
2
3
4
UPAK
1. Gate
2. Drain
3. Source
4. Drain
D
G
S
Silicon P Channel MOS FET
High Speed Power Switching
ADE-208-580B (Z)
3rd. Edition
Jun 1998
Features
• Low on-resistance
R
DS(on)
= 0.35 W typ. at (V
GS
= –10V, I
D
= –1A)
• Low drive current
• 4 V gete drive devices
• High speed switching
Outline
1
2
3
4
UPAK
1. Gate
2. Drain
3. Source
4. Drain
D
G
S