2SJ506L
器件描述：Silicon P Channel MOS FET High Speed Power Switching
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：50.81KB，共10页
Sponsor by e络盟器件资料摘要：
2SJ506(L), 2SJ506(S)
Silicon P Channel MOS FET
High Speed Power Switching
ADE-208-548
Target Specification 1st. Edition
Features
• Low on-resistance
R
DS(on)
= 0.065 W typ. (at V
GS
= –10V, I
D
= –5A)
• Low drive current
• High speed switching
• 4V gate drive devices.
Outline
1
2
3
4
4
1
2
3
1. Gate
2. Drain
3. Source
4. Drain
DPAK–2
D
G
S
Silicon P Channel MOS FET
High Speed Power Switching
ADE-208-548
Target Specification 1st. Edition
Features
• Low on-resistance
R
DS(on)
= 0.065 W typ. (at V
GS
= –10V, I
D
= –5A)
• Low drive current
• High speed switching
• 4V gate drive devices.
Outline
1
2
3
4
4
1
2
3
1. Gate
2. Drain
3. Source
4. Drain
DPAK–2
D
G
S