2SJ496
器件描述：Silicon P-Channel MOS FET High Speed Power Switching
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：50.78KB，共10页
Sponsor by e络盟器件资料摘要：
2SJ496
Silicon P-Channel MOS FET
High Speed Power Switching
ADE-208-482
1st. Edition
Features
• Low on-resistance
R
DS(on)
= 0.12W typ. (at V
GS
= –10 V, I
D
= –2.5 A)
• 4V gate drive devices.
• Large current capacitance
I
D
= –5 A
Outline
TO-92 Mod
1. Source
2. Drain
3. Gate
3
2
1
D
G
S
Silicon P-Channel MOS FET
High Speed Power Switching
ADE-208-482
1st. Edition
Features
• Low on-resistance
R
DS(on)
= 0.12W typ. (at V
GS
= –10 V, I
D
= –2.5 A)
• 4V gate drive devices.
• Large current capacitance
I
D
= –5 A
Outline
TO-92 Mod
1. Source
2. Drain
3. Gate
3
2
1
D
G
S