© 1997
DATA SHEET
MOS FIELD EFFECT POWER TRANSISTORS
2SJ495
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
This product is P-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Super Low On-State Resistance
RDS(on)1 = 30 mΩ MAX. (VGS = –10 V, ID = –15 A)
RDS(on)2 = 56 mΩ MAX. (VGS = –4 V, ID = –15 A)
• Low Ciss Ciss = 4120 pF TYP.
• Built-in Gate Protection Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage VDSS –60 V
Gate to Source Voltage* VGSS(AC) m20 V
Gate to Source Voltage VGSS(DC) –20, 0 V
Drain Current (DC) ID(DC) m30 A
Drain Current (pulse)** ID(pulse) m120 A
Total Power Dissipation (TC = 25°C) PT 35 W
Total Power Dissipation (TA = 25°C) PT 2.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
*f = 20 kHz, Duty Cycle ≤ 10% (+Side)
**PW ≤ 10 µs, Duty Cycle ≤ 1%
THERMAL RESISTANCE MP-45F (ISOLATED TO-220)
Channel to Case Rth(ch-c) 3.57 °C/W
Channel to Ambient Rth(ch-A) 62.5 °C/W
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this deveice
acutally used, an addtional protection circiut is externally required if a voltage exceeding the rated voltage may be applied
to this device.
Document No. D11267EJ2V0DS00 (2nd edition)
Date Published November 1997 N
Printed in Japan
PACKAGE DIMENSIONS
(in millimeter)
2.54 2.54
1.5 ± 0.2
1.3 ± 0.2 2.5 ± 0.1
1. Gate
2. Drain
3. Source
0.65 ± 0.1
0.7 ± 0.1
10.0 ± 0.3 4.5 ± 0.2
3.2 ± 0.2
2.7 ± 0.2
15.0 ± 0.3
12.0 ± 0.2
13.5 MIN.
4 ± 0.2
3 ± 0.1
213
Gate
Drain
Body
Diode
Gate Protection
Diode
Source