2SJ505
器件描述：Silicon P Channel MOS FET High Speed Power Switching
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：54.54KB，共10页
Sponsor by e络盟器件资料摘要：
2SJ505(L), 2SJ505(S)
Silicon P Channel MOS FET
High Speed Power Switching
ADE-208-547
Target specification 1st. Edition
Features
• Low on-resistance
R
DS(on)
= 0.017W typ.
• Low drive current.
• 4V gate drive devices.
• High speed switching.
Outline
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
4
1
2
3
4
LDPAK
D
G
S
Silicon P Channel MOS FET
High Speed Power Switching
ADE-208-547
Target specification 1st. Edition
Features
• Low on-resistance
R
DS(on)
= 0.017W typ.
• Low drive current.
• 4V gate drive devices.
• High speed switching.
Outline
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
4
1
2
3
4
LDPAK
D
G
S