MOS FIELD EFFECT POWER TRANSISTORS
2SJ494
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
1998©
Document No. D11266EJ2V0DS00 (2nd edition)
Date Published January 1998 N CP(K)
Printed in Japan
DATA SHEET
DESCRIPTION
This product is P-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Super Low On-State Resistance
RDS(on)1 = 50 m: Max. (VGS = –10 V, ID = –10 A)
RDS(on)2 = 88 m: Max. (VGS = –4 V, ID = –10 A)
• Low Ciss Ciss = 2360 pF Typ.
• Built-in Gate Protection Diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage VDSS –60 V
Gate to Source Voltage* VGSS (AC) +20 V
Gate to Source Voltage VGSS (DC) –20, 0 V
Drain Current (DC) ID (DC) +20 A
Drain Current (pulse)** ID (pulse) +80 A
Total Power Dissipation (TC = 25 °C) PT 35 W
Total Power Dissipation (TA = 25 °C) PT 2.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
* f = 20 kHz, Duty Cycle d 10% (+Side)
** PW d 10 Ps, Duty Cycle d 1%
THERMAL RESISTANCE
Channel to Case Rth (ch-C) 3.57 °C/W
Channel to Ambient Rth (ch-A) 62.5 °C/W
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
PACKAGE DIMENSIONS
(in millimeter)
1. Gate
2. Drain
3. Source
10.0±0.3
3.2±0.2
2.7±0.2
1.3±0.20.7±0.1
2.54 2.54
1.5±0.2
123
4±0.2
13.5 MIN.
12.0±0.2
15.0±0.3
3±0.1
4.5±0.2
2.5±0.1
0.65±0.1
ISOLATED TO-220 (MP-45F)
Body
Diode
Source
Drain
Gate
Gate Protection
Diode
–
–
–