The information in this document is subject to change without notice.
©

1999
MOS FIELD EFFECT TRANSISTOR
2SJ493
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No. D11265EJ3V0DS00 (3rd edition)
Date Published January 1999 NS CP(K)
Printed in Japan
DESCRIPTION
This product is P-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Super low on-state resistance
RDS(on)1 = 100 mΩ (MAX.) (VGS = –10 V, ID = –8 A)
RDS(on)2 = 185 mΩ (MAX.) (VGS = –4 V, ID = –8 A)
• Low Ciss: Ciss = 1210 pF (TYP.)
• Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) VDSS –60 V
Gate to Source Voltage (VDS = 0 V) VGSS(AC) # 20 V
Gate to Source Voltage (VDS = 0 V)
Note1
VGSS(DC) –20, 0 V
Drain Current (DC) ID(DC) # 16 A
Drain Current (pulse)
Note2
ID(pulse) # 64 A
Total Power Dissipation (TC = 25°C) PT 30 W
Total Power Dissipation (TA = 25°C) PT 2.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Single Avalanche Current
Note3
IAS –16 A
Single Avalanche Energy
Note3
EAS 25.6 mJ
Notes 1. f = 20 kHz, Duty Cycle ≤ 10% (+Side)
2. PW ≤ 10 µs, Duty Cycle ≤ 1 %
3. Starting Tch = 25 °C, RA = 25 Ω, VGS = –20 V a161 0
THERMAL RESISTANCE
Channel to Case Rth(ch-C) 4.17 °C/W
Channel to Ambient Rth(ch-A) 62.5 °C/W
ORDERING INFORMATION
PART NUMBER PACKAGE
2SJ493 Isolated TO-220