2SJ483
器件描述：Silicon P Channel MOS FET High Speed Power Switching
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：43.78KB，共9页
Sponsor by e络盟器件资料摘要：
2SJ483
Silicon P Channel MOS FET
High Speed Power Switching
ADE-208-519
1st. Edition
Features
• Low on-resistance
R
DS(on)
= 0.08W typ (at V
GS
= –10 V, I
D
= –2.5 A)
• 4V gate drive devices.
• Large current capacitance
I
D
= –5 A
Outline
TO-92MOD.
1. Source
2. Drain
3. Gate
3
2
1
D
G
S
Silicon P Channel MOS FET
High Speed Power Switching
ADE-208-519
1st. Edition
Features
• Low on-resistance
R
DS(on)
= 0.08W typ (at V
GS
= –10 V, I
D
= –2.5 A)
• 4V gate drive devices.
• Large current capacitance
I
D
= –5 A
Outline
TO-92MOD.
1. Source
2. Drain
3. Gate
3
2
1
D
G
S