2SJ479
器件描述：Silicon P Channel DV-L MOS FET High Speed Power Switching
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：38.52KB，共7页
Sponsor by e络盟器件资料摘要：
2SJ479(L), 2SJ479(S)
Silicon P Channel DV–L MOS FET
High Speed Power Switching
ADE-208-541
1st. Edition
Features
• Low on-resistance
R
DS(on)
= 25 mW typ.
• 4V gate drive devices.
• High speed switching
Outline
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
4
1
2
3
4
LDPAK
G
D
S
Silicon P Channel DV–L MOS FET
High Speed Power Switching
ADE-208-541
1st. Edition
Features
• Low on-resistance
R
DS(on)
= 25 mW typ.
• 4V gate drive devices.
• High speed switching
Outline
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
4
1
2
3
4
LDPAK
G
D
S