2SJ452
Silicon P-Channel MOS FET
ADE-208-383
1st. Edition
Application
Low frequency power switching
Features
• Low on-resistance.
• Low drive power
• 2.5 V gate drive device.
• Small package (MPAK).
Outline
MPAK
1. Source
2. Gate
3. Drain
S
D
G
2
1
3