© 1996
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ462
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DESCRIPTION
The 2SJ462 is a switching device which can be driven directly
by an IC operating at 3 V.
The 2SJ462 features a low on-state resistance and can be
driven by a low voltage power source, so it is suitable for applica-
tions such as power management.
FEATURES
• Can be driven by a 2.5 V power source.
• New-type compact package.
Has advantages of packages for small signals and for power
transistors, and compensates those disadvantages.
• Low on-state resistance.
RDS(ON) : 0.29 Ω MAX. @VGS = –2.5 V, ID = –0.5 A
RDS(ON) : 0.19 Ω MAX. @VGS = –4.0 V, ID = –1.0 A
ABSOLUTE MAXIMUM RATINGS (TA = +25 ˚C)
Drain to Source Voltage VDSS –12 V
Gate to Source Voltage VGSS ±8.0 V
Drain Current (DC) ID(DC) ±2.5 A
Drain Current (pulse) ID(pulse) ±5.0* A
Total Power Dissipation PT 2.0** W
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
* PW ≤ 10 ms, Duty Cycle ≤ 1 %
** Mounted on ceramic board of 7.5 cm
2
× 0.7 mm
Document No. D11449EJ1V0DS00 (1st edition)
Date Published April 1996 P
Printed in Japan
Package Drawings (unit : mm)
5.7 ±0.1
2.0 ±0.2
213
1.5 ±0.1
0.4 ±0.05
4.2
0.85 ±0.1
2.1
0.5 ±0.1
1.0
0.55
0.5 ±0.1
3.65 ±0.1 5.4 ±0.25
Equivalent Circuit
Source
Internal Diode
Gate Protect
Diode
Gate
Drain
Electrode
Connection
1. Source
2. Drain
3. Gate
Marking : UA3