2SJ425
器件描述:MOSFET
文件大小:34.03KB,共1页
Sponsor by e络盟
器件资料摘要:
Absolute Maximum Ratings Electrical Characteristics
Symbol Ratings Unit
VDSS –60 V(BR) DSS –60 V ID = –250µA, VGS = 0VV
VGSS 20 IGSS 500 nA VGS = 20VV
ID 8 IDSS –250 µAVDS = –60V, VGS = 0VA
ID (pulse)
(Ta = 25ºC) (Ta = 25ºC)
VTH –2.0 –4.0 V VDS = –10V, ID = –250µAA
PD 30 (Tc = 25ºC) Re (yfs) 1.8 2.8 S VDS = –10V, ID = –4.0AW
RDS (on) 0.2 0.28 Ω VGS = –10V, ID = –4.0ATch 150
Ciss 580 pF
VDS = –25V, f = 1.0MHz,
VGS = 0V
ID = –4.0A, VDD = –30V,
VGS = –10V,
See Figure 3 on Page 5.
ºC
Tstg –55 to +150
Coss 360 pF
ºC
ton 90 ns
toff 45 ns
Symbol Unit Conditions
Ratings
typ maxmin
46
± ±
0
10
V 10VGS =
6V
5V
V 10VGS =
0
50
100
150
200
250
–50
0
0 50 100 150
100
200
300
400
510200.1 0.5 1 5
0.5
1
10
V 10VDS =
25ºC
125ºC
0
20
10 20 30 40 50
50
100
500
1000
2000
V 0VGS
=f 1MHz
=
Ciss
Coss
Crss
0.05
0.5 1 50 100
0.1
0.5
1
5
10
50
ID (pulse) max
DI max
1ms
100
µ
s
DC OPERATION
10ms (1shot)
0
10
20
30
0 50 100 150
0
01234
2
6
8
V 0VGS =
0
2
3
4
5
V 10VGS =
I 4AD =T 55ºCC
= –
LIMITED
With infinite heatsink
Without heatsink
–
8–
6–
4–
2–
0
2– 4– 6– 8– 10–
– 7V–
–
–
0
8–
6–
4–
2–
0
2– 4– 6– 8–
V 10VDS =
25ºC
T 125ºCC =
55ºC–
1–02– 3– 4– 5– 6– 7– 8–
0.3
5
–– 10––
–
1
–
–
–
–
––
I 4AD = –
I 8AD = –
–
–
–
–– –––
4
–
–
–
–
–– ––
10V–
5V–
510
–
–
–
–
–
–
–– –– ––
–
–
–
2SJ425
External dimensions 1 ...... FM20
±
±
32 (Tch 150ºC)
±
(Tc=25ºC)
R
DS
(ON)
(m
Ω
) R
DS
(ON)
(m
Ω
)
Re
(yfs)
(S)
Capacitance (pF)
Ta (ºC)
V
DS
(V)
VDS — ID Characteristics
ID — Re (yfs) Characteristics
VDS — Capacitance Characteristics VSD — IDR Characteristics Ta — PD CharacteristicsSafe Operating Area
VGS — VDS Characteristics TC — RDS (ON) Characteristics
VGS — ID Characteristics ID — RDS (ON) Characteristics
VDS (V)VDS (V) VSD (V)
I
DR
(A)
I
D
(A)
P
D
(W)
Tc (ºC)VGS (V)ID (A)
VGS (V)VDS (V) ID (A)
I
D
(A)
I
D
(A)
R
DS (ON)