1996
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ411
P-CHANNEL SIGNAL MOS FET
FOR SWITCHING
Document No. D11219EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
PACKAGE DIMENSIONS (in mm)
7.0 MAX. 1.2
2.0
9.0 MAX.
12.0 MIN.
0.55 ±0.1
0.8 ±0.1
0.6 ±0.1
3.0 MAX.
0.6 ±0.1
0.6 ±0.1
1.71.7
1.5
4.0 MAX.
G D S
EQUIVALENT CIRCUIT
Source (S)
Internal
Diode
Gate
Protection
Diode
Gate (G)
Drain (D)
PIN
CONNECTIONS
G: Gate
D: Drain
S: Source
The 2SJ411 is a P-channel MOS FET of a vertical type and is
a switching element that can be directly driven by the output of an
IC operating at 5 V.
This product has a low ON resistance and superb switching
characteristics and is ideal for power control switches and DC/DC
converters.
FEATURES
• Radial taping supported
• Can be directly driven by 5-V IC
• Low ON resistance
RDS(on) = 0.24 Ω MAX. @VGS = –4 V, ID = –2.5 A
RDS(on) = 0.11 Ω MAX. @VGS = –10 V, ID = –2.5 A
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER SYMBOL TEST CONDITIONS RATING UNIT
Drain to Source Voltage VDSS VGS = 0 –30 V
Gate to Source Voltage VGSS VDS = 0 –20/+10 V
Drain Current (DC) ID(DC) ±5.0 A
Drain Current (Pulse) ID(pulse) PW ≤ 10 µs ±20.0 A
Duty cycle ≤ 1 %
Total Power Dissipation PT1 TA = 25 ˚C 1.0 W
Total Power Dissipation PT2 TC = 25 ˚C 6.0 W
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
The internal diode connected between the gate and source of this product is to protect the product from static
electricity. If the product is used in a circuit where the rated voltage of the product may be exceeded, connect
a protection circuit.
The information in this document is subject to change without notice.