2SJ409S
器件资料摘要：
2SJ409(L), 2SJ409(S)
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V Gate drive device can be driven from 5 V source
• Suitable for Switching regulator, DC - DC converter
Outline
3
2
1
4
3
2
1
4
D
G
S
LDPAK
1. Gate
2. Drain
3. Source
4. Drain
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V Gate drive device can be driven from 5 V source
• Suitable for Switching regulator, DC - DC converter
Outline
3
2
1
4
3
2
1
4
D
G
S
LDPAK
1. Gate
2. Drain
3. Source
4. Drain