2SJ387(L), 2SJ387(S)
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• Low drive current
• 2.5 V Gate drive device can be driven from 3 V Source
• Suitable for Switching regulator, DC - DC converter
Outline
1
2
3
1
2
3
4
4
DPAK-2
1. Gate
2. Drain
3. Source
4. Drain
D
G
S