2SJ357
器件资料摘要：
© 1994
DATA SHEET
The 2SJ357 is a P-channel vertical MOS FET that can be
used as a switching element. The 2SJ357 can be directly
driven by an IC operating at 5 V.
The 2SJ357 features a low on-resistance and excellent
switching characteristics, and is suitable for applications
such as actuator driver and DC/DC converter.
FEATURES
• New-type compact package
Has advantages of packages for small signals and for
power transistors, and compensates those disadvan-
tages
• Can be directly driven by an IC operating at 5 V.
• Low on-resistance
RDS(ON) = 0.35 Ω MAX. @VGS = –4 V, ID = –1.5 A
RDS(ON) = 0.20 Ω MAX. @VGS = –10 V, ID = –1.5 A
QUALITY GRADE
Standard
ABSOLUTE MAXIMUM RATINGS (TA = +25 °C)
Parameter Symbol Conditions Ratings Unit
Drain-Source Voltage VDSS VGS = 0 –30 V
Gate-Source Voltage VGSS VDS = 0 –20/+10 V
Drain Current (DC) ID(DC) –/+3.0 A
Drain Current (Pulse) ID(pulse) PW ≤ 10 ms –/+6.0 A
Duty Cycle ≤ 1 %
Total Power Loss PT Mounted on ceramic board of 7.5 cm
2
× 0.7 mm 2.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
MOS FIELD EFFECT TRANSISTOR
2SJ357
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH
Document No. D10803EJ3V0DS00 (3rd edition)
(Previous No. TC-2490)
Date Published January 1999 N CP(K)
Printed in Japan
The information in this document is subject to change without notice.
Package Drawings (unit: mm)
Equivalent Circuit
5.7 ±0.1
2.0 ±0.2
1.5 ±0.1
231
4.2
2.1
1.0
0.4 ±0.05
5.4 ±0.25
3.65 ±0.1
0.5 ±0.1
0.85 ±0.1
0.5 ±0.1
0.55
Drain (D)
Gate (G)
Source (S)
Internal
Diode
Gate Protect
Diode
Marking: UA1
Electrode Connection
1. Source
2. Drain
3. Gate
Please refer to "Quality Grades on NEC Semiconductor Devices" (Document No. C11531E) published by
NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
DATA SHEET
The 2SJ357 is a P-channel vertical MOS FET that can be
used as a switching element. The 2SJ357 can be directly
driven by an IC operating at 5 V.
The 2SJ357 features a low on-resistance and excellent
switching characteristics, and is suitable for applications
such as actuator driver and DC/DC converter.
FEATURES
• New-type compact package
Has advantages of packages for small signals and for
power transistors, and compensates those disadvan-
tages
• Can be directly driven by an IC operating at 5 V.
• Low on-resistance
RDS(ON) = 0.35 Ω MAX. @VGS = –4 V, ID = –1.5 A
RDS(ON) = 0.20 Ω MAX. @VGS = –10 V, ID = –1.5 A
QUALITY GRADE
Standard
ABSOLUTE MAXIMUM RATINGS (TA = +25 °C)
Parameter Symbol Conditions Ratings Unit
Drain-Source Voltage VDSS VGS = 0 –30 V
Gate-Source Voltage VGSS VDS = 0 –20/+10 V
Drain Current (DC) ID(DC) –/+3.0 A
Drain Current (Pulse) ID(pulse) PW ≤ 10 ms –/+6.0 A
Duty Cycle ≤ 1 %
Total Power Loss PT Mounted on ceramic board of 7.5 cm
2
× 0.7 mm 2.0 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
MOS FIELD EFFECT TRANSISTOR
2SJ357
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH
Document No. D10803EJ3V0DS00 (3rd edition)
(Previous No. TC-2490)
Date Published January 1999 N CP(K)
Printed in Japan
The information in this document is subject to change without notice.
Package Drawings (unit: mm)
Equivalent Circuit
5.7 ±0.1
2.0 ±0.2
1.5 ±0.1
231
4.2
2.1
1.0
0.4 ±0.05
5.4 ±0.25
3.65 ±0.1
0.5 ±0.1
0.85 ±0.1
0.5 ±0.1
0.55
Drain (D)
Gate (G)
Source (S)
Internal
Diode
Gate Protect
Diode
Marking: UA1
Electrode Connection
1. Source
2. Drain
3. Gate
Please refer to "Quality Grades on NEC Semiconductor Devices" (Document No. C11531E) published by
NEC Corporation to know the specification of quality grade on the devices and its recommended applications.