2SJ358
器件资料摘要：
Printed in Japan
MOS FIELD EFFECT TRANSISTOR
The 2SJ358 is a P-channel vertical MOS FET that can
be used as a switching element. The 2SJ358 can be
directly driven by an IC operating at 5 V.
The 2SJ358 features a low on-resistance and excellent
switching characteristics, and is suitable for applications
such as actuator driver and DC/DC converter.
FEATURES
• New-type compact package
Has advantages of packages for small signals and for
power transistors, and compensates those disadvan-
tages
• Can be directly driven by an IC operating at 5 V.
• Low on-resistance
RDS(ON) = 0.40 Ω MAX. @VGS = –4 V, ID = –1.5 A
RDS(ON) = 0.30 Ω MAX. @VGS = –10 V, ID = –1.5 A
QUALITY GRADE
Standard
ABSOLUTE MAXIMUM RATINGS (Ta = +25 ˚C)
Parameter Symbol Conditions Ratings Unit
Drain-Source Voltage VDSS VGS = 0 –60 V
Gate-Source Voltage VGSS VDS = 0 –20/+10 V
Drain Current (DC) ID(DC) –/+3.0 A
Drain Current (Pulse) ID(pulse) PW ≤ 10 ms –/+6.0 A
Duty Cycle ≤ 1 %
Total Power Loss PT Mounted on ceramic board of 7.5 cm
2
× 0.7 mm 2.0 W
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device is actually used, an additional protection circuit is externally required if a voltage exceeding the
rated voltage may be applied to this device.
Document No. TC-2491
(O.D. No. TC-8011)
Date Published October 1994 P
2SJ358
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH
The information in this document is subject to change without notice.
© 1994
DATA SHEET
Package Drawings (unit: mm)
Equivalent Circuit
5.7 ±0.1
2.0 ±0.2
1.5 ±0.1
231
4.2
2.1
1.0
0.4 ±0.05
5.4 ±0.25
3.65 ±0.1
0.5 ±0.1
0.85 ±0.1
0.5 ±0.1
0.55
Drain (D)
Gate (G)
Source (S)
Internal
Diode
Gate Protect
Diode
Marking: UA2
Electrode Connection
1. Source
2. Drain
3. Gate
Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by
NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
MOS FIELD EFFECT TRANSISTOR
The 2SJ358 is a P-channel vertical MOS FET that can
be used as a switching element. The 2SJ358 can be
directly driven by an IC operating at 5 V.
The 2SJ358 features a low on-resistance and excellent
switching characteristics, and is suitable for applications
such as actuator driver and DC/DC converter.
FEATURES
• New-type compact package
Has advantages of packages for small signals and for
power transistors, and compensates those disadvan-
tages
• Can be directly driven by an IC operating at 5 V.
• Low on-resistance
RDS(ON) = 0.40 Ω MAX. @VGS = –4 V, ID = –1.5 A
RDS(ON) = 0.30 Ω MAX. @VGS = –10 V, ID = –1.5 A
QUALITY GRADE
Standard
ABSOLUTE MAXIMUM RATINGS (Ta = +25 ˚C)
Parameter Symbol Conditions Ratings Unit
Drain-Source Voltage VDSS VGS = 0 –60 V
Gate-Source Voltage VGSS VDS = 0 –20/+10 V
Drain Current (DC) ID(DC) –/+3.0 A
Drain Current (Pulse) ID(pulse) PW ≤ 10 ms –/+6.0 A
Duty Cycle ≤ 1 %
Total Power Loss PT Mounted on ceramic board of 7.5 cm
2
× 0.7 mm 2.0 W
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device is actually used, an additional protection circuit is externally required if a voltage exceeding the
rated voltage may be applied to this device.
Document No. TC-2491
(O.D. No. TC-8011)
Date Published October 1994 P
2SJ358
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH
The information in this document is subject to change without notice.
© 1994
DATA SHEET
Package Drawings (unit: mm)
Equivalent Circuit
5.7 ±0.1
2.0 ±0.2
1.5 ±0.1
231
4.2
2.1
1.0
0.4 ±0.05
5.4 ±0.25
3.65 ±0.1
0.5 ±0.1
0.85 ±0.1
0.5 ±0.1
0.55
Drain (D)
Gate (G)
Source (S)
Internal
Diode
Gate Protect
Diode
Marking: UA2
Electrode Connection
1. Source
2. Drain
3. Gate
Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by
NEC Corporation to know the specification of quality grade on the devices and its recommended applications.