2SJ278
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device can be driven from 5 V source
• Suitable for switching regulator, DC-DC converter
Outline
4
3
2
1
UPAK
1. Gate
2. Drain
3. Source
4. Drain
D
G
S