Application
High speed power switching
Features
• Low on–resistance
• High speed switching
• Low drive current
• 4 V Gate drive device can be driven
from 5 V source
• Suitable for Switching regulator, DC – DC
converter
1
2, 4
3
DPAK–1
4
3
2
1
4
3
2
1
1. Gate
2. Drain
3. Source
4. Drain
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
———————————————————————————————————————————
Drain to source voltage V
DSS
–60 V
———————————————————————————————————————————
Gate to source voltage V
GSS
±20 V
———————————————————————————————————————————
Drain current I
D
–5 A
———————————————————————————————————————————
Drain peak current I
D(pulse)
* –20 A
———————————————————————————————————————————
Body–drain diode reverse drain current I
DR
–5 A
———————————————————————————————————————————
Channel dissipation Pch** 20 W
———————————————————————————————————————————
Channel temperature Tch 150 °C
———————————————————————————————————————————
Storage temperature Tstg –55 to +150 °C
———————————————————————————————————————————
* PW ≤ 10 µs, duty cycle ≤ 1 %
** Value at Tc=25°C
2SJ245 L , 2SJ245 S
SILICON P-CHANNEL MOS FET