2SJ217
Silicon P-Channel MOS FET
November 1996
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device
Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
D
G
S
1
2
3
TO-3P
1. Gate
2. Drain
(Flange)
3. Source