1
Silicon Junction FETs (Small Signal)
unit: mm
2SJ164
Silicon P-Channel Junction FET
For switching
Complementary to 2SK1104
n Features
l Low ON-resistance
l Low-noise characteristics
1: Source
2: Gate
3: Drain
EIAJ: SC-72
New S Type Package
n Absolute Maximum Ratings (Ta = 25°C)
Parameter
Gate to Drain voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
GDS
I
D
I
G
P
D
T
ch
T
stg
Ratings
65
- 20
- 10
300
150
- 55 to +150
Unit
V
mA
mA
mW
°C
°C
n Electrical Characteristics (Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
Forward transfer admittance
Drain to Source ON-resistance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Symbol
I
DSS
*
I
GSS
V
GDS
V
GSC
| Y
fs
|
R
DS(on)
C
iss
C
oss
C
rss
Conditions
V
DS
= - 10V, V
GS
= 0
V
GS
= 30V, V
DS
= 0
I
G
= 10m A, V
DS
= 0
V
DS
= - 10V, I
D
= - 10m A
V
DS
= - 10V, I
D
= - 1mA, f = 1kHz
V
DS
= - 10mV, V
GS
= 0
V
DS
= - 10V, V
GS
= 0, f = 1MHz
min
- 0.2
65
1.8
max
- 6
10
3.5
Unit
mA
nA
V
V
mS
W
pF
pF
pF
*
I
DSS
rank classification
typ
1.5
2.5
300
10
3
3
Runk
I
DSS
(mA)
O
- 0.2 to - 1
P
- 0.6 to - 1.5
Q
- 1 to - 3
R
- 2.5 to - 6
4.0±0.2
marking
2.54±0.15
1.271.27
3.0±0.2
15.6±0.5
2.0±0.2
0.7±0.1
0.45
–
0.1
123
+0.2