1
Silicon MOS FETs (Small Signal)
unit: mm
2SJ0536
Silicon P-Channel MOS FET
Secondary battery pack (Li ion battery, etc.)
For switching
n Features
l High-speed switching
l S-mini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing.
l Low-voltage drive (V
th
: - 1 to 2V)
l Low Ron
n Absolute Maximum Ratings (Ta = 25°C)
Parameter
Drain to Source voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
DS
V
GSO
I
D
I
DP
P
D
T
ch
T
stg
Ratings
- 30
±20
- 100
- 200
150
150
- 55 to +150
Unit
V
V
mA
mA
mW
°C
°C
n Electrical Characteristics (Ta = 25°C)
Parameter
Drain current
Gate cut-off current
Gate threshold voltage
Forward transfer admittance
Drain to source ON-resistance
Turn-on time
Turn-off time
Symbol
I
DSS
I
GSS
V
th
| Y
fs
|
R
DS(on)
t
on
t
off
Conditions
V
DS
= - 30V, V
GS
= 0
V
GS
= ±20V, V
DS
= 0
V
DS
= - 5V, I
D
= - 1m A
V
DS
= - 5V, I
D
= - 10mA
V
GS
= - 5V, I
D
= - 10mA
V
DD
= - 5V, V
GS
= - 5 to 0V, R
L
= 200W
V
DD
= - 5V, V
GS
= - 5 to 0V, R
L
= 200W
min
- 1
8
typ
50
100
25
Unit
m A
m A
V
mS
W
m s
m s
Marking Symbol: 2C
max
- 0.1
±1
- 2
75
1: Gate
2: Source EIAJ: SC-70
3: Drain S-Mini Type Package (3-pin)
2.1±0.1
1.3±0.1
0.9±0.1
0.7±0.1
0.3
+0.1 –0
0.15
+0.1 –0.05
2.0±0.2
1.25±0.1 0.4250.425
1
3
2
0.65
0.2
0.65
0 to 0.1
0.2±0.1