237
Silicon Junction FETs (Small Signal)
unit: mm
2SJ0164 (2SJ164)
Silicon P-Channel Junction FET
For switching
Complementary to 2SK1104
a73 Features
a71Low ON-resistance
a71Low-noise characteristics
1: Source
2: Gate
3: Drain
NS-B1 Package
a73 Absolute Maximum Ratings (Ta = 25°C)
Parameter
Gate to Drain voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
GDS
I
D
I
G
P
D
T
ch
T
stg
Ratings
65
−20
−10
300
150
−55 to +150
Unit
V
mA
mA
mW
°C
°C
a73 Electrical Characteristics (Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
Forward transfer admittance
Drain to Source ON-resistance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Symbol
I
DSS
*
I
GSS
V
GDS
V
GSC
| Y
fs
|
R
DS(on)
C
iss
C
oss
C
rss
Conditions
V
DS
= −10V, V
GS
= 0
V
GS
= 30V, V
DS
= 0
I
G
= 10µA, V
DS
= 0
V
DS
= −10V, I
D
= −10µA
V
DS
= −10V, I
D
= −1mA, f = 1kHz
V
DS
= −10mV, V
GS
= 0
V
DS
= −10V, V
GS
= 0, f = 1MHz
min
− 0.2
65
1.8
max
−6
10
3.5
Unit
mA
nA
V
V
mS
Ω
pF
pF
pF
*
I
DSS
rank classification
typ
1.5
2.5
300
10
3
3
Runk
I
DSS
(mA)
O
− 0.2 to −1
P
− 0.6 to −1.5
Q
−1 to −3
R
−2.5 to −6
4.0±0.2
0.75 max.
2.0±0.2
0.45
(2.5) (2.5)
0.7±0.1
231
+0.20
–0.10
0.45
+0.20
–0.10
7.6
3.0
±0.2
(0.8)
(0.8)
15.6
±0.5
Note) The part number in the parenthesis shows conventional part number.