Application
High speed power switching
Features
• High speed switching
• Low on saturation voltage
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
———————————————————————————————————————————
Collector to emitter voltage V
CES
600 V
———————————————————————————————————————————
Gate to emitter voltage V
GES
±20 V
———————————————————————————————————————————
Collector current I
C
75 A
———————————————————————————————————————————
Collector peak current ic(peak) 150 A
———————————————————————————————————————————
Collector dissipation P
C
* 200 W
———————————————————————————————————————————
Channel temperature T
j
150 °C
———————————————————————————————————————————
Storage temperature Tstg –55 to +150 °C
———————————————————————————————————————————
* Value at Tc = 25°C
TO–3PL
1. Gate
2. Collector
3. Emitter
1
2
3
1
2
3
1
2SH22
Silicon N-Channel IGBT
1st. Edition
Feb. 1995
ADE–208–295 (Z)