1
Publication date: January 2002 SJF00001BED
Silicon Junction FETs (Small Signal)
2SJ0163 (2SJ163)
Silicon P-Channel Junction FET
For general switching
Complementary to 2SK1103
a73 Features
a71 Low ON-resistance
a71 Low-noise characteristics
1: Source JEDEC: TO-236
2: Drain EIAJ: SC-59
3: Gate Mini3-G1 Package
a73 Absolute Maximum Ratings (T
a
= 25°C)
Parameter
Gate to Drain voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
GDS
I
D
I
G
P
D
T
ch
T
stg
Ratings
65
−20
−10
150
150
−55 to +150
Unit
V
mA
mA
mW
°C
°C
a73 Electrical Characteristics (T
a
= 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
Forward transfer admittance
Drain to Source ON-resistance
Input capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Symbol
I
DSS
*
I
GSS
V
GDS
V
GSC
| Y
fs
|
R
DS(on)
C
iss
C
rss
Conditions
V
DS
= −10 V, V
GS
= 0
V
GS
= 30 V, V
DS
= 0
I
G
= 10 µA, V
DS
= 0
V
DS
= −10 V, I
D
= −10 µA
V
DS
= −10 V, I
D
= −1 mA, f = 1 kHz
V
DS
= −10 mV, V
GS
= 0
V
DS
= −10 V, V
GS
= 0, f = 1 MHz
min
− 0.2
65
1.8
max
−6
10
3.5
Unit
mA
nA
V
V
mS
Ω
pF
pF
*
I
DSS
rank classification
Marking Symbol (Example): 4M
0.40
+0.10
–0.05
(0.65)
1.50
+0.25 –0.05
2.8
+0.2 –0.3
21
3
(0.95) (0.95)
1.9±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±
0.2
5˚
10˚
0 to 0.1
1.1
+0.2 –0.1
1.1
+0.3 –0.1
typ
1.5
2.5
300
12
4
Runk
I
DSS
(mA)
Marking Symbol
O
− 0.2 to −1
4MO
P
− 0.6 to −1.5
4MP
Q
−1 to −3
4MQ
R
−2.5 to −6
4MR
Note) The part number in the parenthesis shows conventional part number.
Unit: mm