Application
High speed power switching
Features
• High speed switching
• Low on saturation voltage
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
———————————————————————————————————————————
Collector to emitter voltage V
CES
600 V
———————————————————————————————————————————
Gate to emitter voltage V
GES
±20 V
———————————————————————————————————————————
Collector current I
C
50 A
———————————————————————————————————————————
Collector peak current ic(peak) 100 A
———————————————————————————————————————————
Collector dissipation P
C
* 150 W
———————————————————————————————————————————
Channel temperature T
j
150 °C
———————————————————————————————————————————
Storage temperature Tstg –55 to +150 °C
———————————————————————————————————————————
* Value at Tc = 25°C
1. Gate
2. Collector
3. Emitter
TO–3P
1
2
3
1
2
3
1
2SH21
Silicon N-Channel IGBT
1st. Edition
Feb. 1995
ADE–208–294 (Z)