1
Transistor
2SD973, 2SD973A
Silicon NPN epitaxial planer type
For low-frequency power amplification
n
Features
l Low collector to emitter saturation voltage V
CE(sat)
.
l M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector EIAJ:SC–71
3:Emitter M Type Mold Package
6.9– 0.1
0.55– 0.1 0.45– 0.05
1.0
–
0.1
1.0
2.5– 0.1
1.0
1.5
1.5 R0.9
R0.9
R0.7
0.4
0.85
3.5
–
0.1
2.0
–
0.2
2.4
–
0.2
1.25
–
0.05
4.1
–
0.2
4
.5
–
0.1
2.5 2.5
123
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
*
T
j
T
stg
Ratings
30
60
25
50
5
1.5
1
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
2SD973
2SD973A
2SD973
2SD973A
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1
*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
I
C
= 10m A, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10m A, I
C
= 0
V
CE
= 10V, I
C
= 500mA
*2
V
CE
= 5V, I
C
= 1A
*2
I
C
= 500mA, I
B
= 50mA
*2
I
C
= 500mA, I
B
= 50mA
*2
V
CB
= 10V, I
E
= –50mA, f = 200MHz
V
CB
= 10V, I
E
= 0. f = 1MHz
min
30
60
25
50
5
85
50
typ
160
100
0.2
0.85
200
11
max
0.1
340
0.4
1.2
20
Unit
m A
V
V
V
V
V
MHz
pF
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
2SD973
2SD973A
2SD973
2SD973A
*2
Pulse measurement
*1
h
FE1
Rank classification
Rank Q R S
h
FE1
85 ~ 170 120 ~ 240 170 ~ 340