2SD970
器件描述：Silicon NPN Triple Diffused
器件厂商：HITACHI [Hitachi Semiconductor]
文件大小：37.04KB，共6页
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2SD970(K)
Silicon NPN Triple Diffused
Application
Medium speed and power switching complementary pair with 2SB791(K)
Outline
TO-220AB
2 kΩ
(Typ)
200 Ω
(Typ)
1
2
3
1. Base
2. Collector
(Flange)
3. Emitter
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
CBO
120 V
Collector to emitter voltage V
CEO
120 V
Emitter to base voltage V
EBO
7V
Collector current I
C
8A
Collector peak current I
C(peak)
12 A
Collector power dissipation P
C
*
1
40 W
Junction temperature Tj 150 C
Storage temperature Tstg –55 to +150 C
Note: 1. Value at T
C
= 25 C.
Silicon NPN Triple Diffused
Application
Medium speed and power switching complementary pair with 2SB791(K)
Outline
TO-220AB
2 kΩ
(Typ)
200 Ω
(Typ)
1
2
3
1. Base
2. Collector
(Flange)
3. Emitter
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
CBO
120 V
Collector to emitter voltage V
CEO
120 V
Emitter to base voltage V
EBO
7V
Collector current I
C
8A
Collector peak current I
C(peak)
12 A
Collector power dissipation P
C
*
1
40 W
Junction temperature Tj 150 C
Storage temperature Tstg –55 to +150 C
Note: 1. Value at T
C
= 25 C.