1
Transistor
2SD968, 2SD968A
Silicon NPN epitaxial planer type
For low-frequency driver amplification
Complementary to 2SB789 and 2SB789A
n
Features
l High collector to emitter voltage V
CEO
.
l Large collector power dissipation P
C
.
l Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector EIAJ:SC–62
3:Emitter Mini Power Type Package
4.5– 0.1
2.6
–
0.1
2.5
–
0.1
0.4max.
1.0
+0.1 –0.2
4.0
+0.25 –0.20
3.0– 0.15
1.5– 0.1
0.4– 0.08
0.5– 0.08
1.5– 0.1
0.4– 0.04
1.6– 0.2
45°
marking
321
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
*
T
j
T
stg
Ratings
100
120
100
120
5
1
0.5
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
2SD968
2SD968A
2SD968
2SD968A
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
CEO
V
EBO
h
FE1
*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
I
C
= 100m A, I
B
= 0
I
E
= 10m A, I
C
= 0
V
CE
= 10V, I
C
= 150mA
*2
V
CE
= 5V, I
C
= 500mA
*2
I
C
= 500mA, I
B
= 50mA
*2
I
C
= 500mA, I
B
= 50mA
*2
V
CB
= 10V, I
E
= –50mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
100
120
5
90
50
typ
100
0.2
0.85
120
11
max
220
0.6
1.2
20
Unit
V
V
V
V
MHz
pF
*1
h
FE1
Rank classification
Rank Q R
h
FE1
90 ~ 155 130 ~ 220
2SD968 WQ WR
2SD968A VQ VR
Marking symbol : W
(2SD968)
V
(2SD968A)
Marking
Symbol
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
2SD968
2SD968A
*2
Pulse measurement