2SD880 NPN EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY POWER AMPLIFIER


! Complement to 2SB834 TO-220

ABSOLUTE MAXIMUM RATINGS (T
A
=25
o
C)
Characteristic Symbol Rating Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base voltage
Collector Current (DC)
Collector Dissipation (Tc=25
o
C)
Junction Temperature
Storage Temperature

VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
60
60
7
3
30
150
-50~150
V
V
V
A
W

o
C

o
C
ELECTRICAL CHARACTERISTICS (T
A
=25
o
C)
Characteristic Symbol Test Condition Min Typ Max Unit
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Collector- Emitter Saturation Voltage
Current Gain Bandwidth Product
ICBO
IEBO
hFE1
hFE2
VCE(sat)
fT
VCB= 60V , IE=0
VEB= 7V , IC=0
VCE= 5V ,
IC=0.5A
VCE= 5V , IC=3A
IC=3A ,
IB=0.3A
VCE= 5V ,
IC=0.5A
60
20
0.4
3
100
100
300
1.0
µA
µA
V
MHZ
Wing Shing Computer Components Co., (H. K )L td . TeL (852)234 1 92 76 Fax : (852)27 97 8153 .
Home page: http: / /www.wingshing.com e_ mail: wsccltd@hkstar.com