GENERAL DESCRIPTION
Highvoltage,high-speed switching npn transistors in a
metal envelope , primarily for use in switching power
circuites of colour television receivers
QUICK REFERENCE DATA
LIMITING VALUES
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0V
-
1500 V
V
CEO
Collector-emitter voltage (open base)
-
600 V
I
C
Collector current (DC)
-
5 A
I
CM
Collector current peak value
-
A
P
tot
Total power dissipation T
mb
25
-
50 W
V
CEsat
Collector-emitter saturation voltage I
C
= 4.0A; I
B
= 0.8A 5 V
I
csat
Collector saturation current f = 16KHz - A
V
F
Diode forward voltage V
t
f
Fall time I
Csat
= 4.0A; f = 16KHz 1.0 s
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
V
CESM
Collector-emitter voltage peak value V
BE
= 0V - 1500 V
V
CEO
Collector-emitter voltage (open base) - 600 V
I
C
Collector current (DC) 5 A
I
CM
Collector current peak value - A
I
B
Base current (DC) - 1 A
I
BM
Base current peak value - A
P
tot
Total power dissipation Tmb 25 - 50 W
T
stg
Storage temperature -55 150
T
j
Junction temperature - 150
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
I
CE
Collector-emitter cut-off current V
BE
= 0V; V
CE
= V
CESMmax
- 0.1 mA
I
CES
V
BE
= 0V; V
CE
= V
CESMmax
- 0.2 mA
T
j
= 125
V
CEOsust
Collector-emitter sustaining voltage I
B
= 0A; I
C
= 100mA - V
L = 25mH
V
CEsat
Collector-emitter saturation voltages I
C
= 4.0A; I
B
= 0.8A - 5 V
V
BEsat
Base-emitter satuation voltage I
C
= 4.0A; I
B
= 0.8A - 1.5 V
h
FE
DC current gain I
C
= 1.0A; V
CE
= 5V 8 40
V
F
Diode forward voltage V
f
T
Transition frequency at f = 1MHz I
C
=1.0A; V
CE
= 10V 1.0 - MHz
C
c
Collector capacitance at f = 1MHz V
CB
= 10V 165 pF
t
s
Switching times(16KHz line deflecton circuit)
I
C
=4.0A,I
B1
=-I
B2
=0.8A,V
CC
=105V - s
t
f
Turn-off storage time Turn-off fall time I
C
=4.0A,I
B1
=-I
B2
=0.8A,V
CC
=105V
1.0 s
ELECTRICAL CHARACTERISTICS
TO-3
Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage: http://www.wingshing.com E-mail: wsccltd@hkstar.com