2SD850
器件描述:Silicon Diffused Power Transistor(GENERAL DESCRIPTION)
文件大小:189.21KB,共1页
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器件资料摘要:
GENERAL DESCRIPTION
Highvoltage,high-speed switching npn transistors in a
plastic package primarily for use in horizontal
deflection circuites of colour television receivers
QUICK REFERENCE DATA
LIMITING VALUES
SYMBOL PARAMETER CONDITIONS TYP MAX UNIT
VCESM
Collector-emitter voltage peak value VBE = 0V
-
1500 V
VCEO
Collector-emitter voltage (open base)
-
600 V
IC
Collector current (DC)
-
3A
ICM
Collector current peak value
-
6A
Ptot
Total power dissipation Tmb 25
-
40 W
VCEsat
Collector-emitter saturation voltage IC = 3.0A; IB = 0.8A
-
5V
Icsat
Collector saturation current f = 16KHz - A
VF
Diode forward voltage V
tf
Fall time ICsat = 3.0A; f = 16KHz 1.0 s
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
VCESM
Collector-emitter voltage peak value VBE = 0V - 1500 V
VCEO
Collector-emitter voltage (open base) - 600 V
IC
Collector current (DC) - 3 A
ICM
Collector current peak value - 6 A
IB
Base current (DC) - A
IBM
Base current peak value - A
Ptot
Total power dissipation Tmb 25 -40W
Tstg
Storage temperature -55 150
Tj
Junction temperature - 150
SYMBOL PARAMETER CONDITIONS TYP MAX UNIT
ICE
Collector cut-off current VBE = 0V; VCE = VCESMmax -1.0mA
ICES
VBE = 0V; VCE = VCESMmax -2.5mA
Tj = 125
VCEOsust
Collector-emitter sustaining voltage IB = 0A; IC = 100mA - V
L = 25mH
VCEsat
Collector-emitter saturation voltages IC = 3.0A; IB = 0.8A - 5 V
VBEsat
Base-emitter satuation voltage IC = 3.0A; IB = 0.8A - 1.5 V
hFE
DC current gain IC = 0.5A; VCE = 5V 8
VF
Diode forward voltage V
fT
Transition frequency at f = 5MHz IC=0.1A,VCE=10V 3 - MHz
Cc
Collector capacitance at f = 1MHz VCB = 10V 90 - pF
ts
Switching times(16KHz line deflecton circuit)
IC=3A,IB(end)=0.8A,VCC=105V - s
tf
Turn-off storage time Turn-off fall time IC=3A,IB(end)=0.8A,VCC=105V
1.0 s
ELECTRICAL CHARACTERISTICS
TO-3
Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage: http://www.wingshing.com E-mail: wsccltd@hkstar.com