1
Transistor
2SD662, 2SD662B
Silicon NPN epitaxial planer type
For high breakdown voltage general amplification
n
Features
l High collector to emitter voltage V
CEO
.
l High transition frequency f
T
.
l M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector EIAJ:SC–71
3:Emitter M Type Mold Package
6.9– 0.1
0.55– 0.1 0.45– 0.05
1.0
–
0.1
1.0
2.5– 0.1
1.0
1.5
1.5 R0.9
R0.9
R0.7
0.4
0.85
3.5
–
0.1
2.0
–
0.2
2.4
–
0.2
1.25
–
0.05
4.1
–
0.2
4
.5
–
0.1
2.5 2.5
123
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
250
400
200
400
5
100
70
600
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
2SD662
2SD662B
2SD662
2SD662B
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to emitter
voltage
Emitter to base voltage
Forward current
transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CEO
V
CEO
V
EBO
h
FE
*
V
CE(sat)
f
T
C
ob
Conditions
V
CE
= 100V, I
B
= 0
I
C
= 100m A, I
B
= 0
I
E
= 10m A, I
C
= 0
V
CE
= 10V, I
C
= 5mA
I
C
= 50mA, I
B
= 5mA
V
CB
= 10V, I
E
= –10mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
200
400
5
30
30
50
typ
80
5
max
2
220
150
1.2
10
Unit
m A
V
V
V
MHz
pF
*
h
FE
Rank classification
Rank P Q R
h
FE
30 ~ 100 60 ~ 150 100 ~ 220
2SD662
2SD662B
2SD662
2SD662B