1
Transistor
2SD661, 2SD661A
Silicon NPN epitaxial planer type
For low-frequency and low-noise amplification
n
Features
l Low noise voltage NV.
l High foward current transfer ratio h
FE
.
l M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
n
Absolute Maximum Ratings (Ta=25˚C)
Unit: mm
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector EIAJ:SC–71
3:Emitter M Type Mold Package
6.9– 0.1
0.55– 0.1 0.45– 0.05
1.0
–
0.1
1.0
2.5– 0.1
1.0
1.5
1.5 R0.9
R0.9
R0.7
0.4
0.85
3.5
–
0.1
2.0
–
0.2
2.4
–
0.2
1.25
–
0.05
4.1
–
0.2
4
.5
–
0.1
2.5 2.5
123
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
35
55
35
55
7
200
100
400
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
2SD661
2SD661A
2SD661
2SD661A
n
Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Noise voltage
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
*
V
CE(sat)
f
T
NV
Conditions
V
CB
= 20V, I
E
= 0
V
CE
= 20V, I
B
= 0
I
C
= 10m A, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10m A, I
C
= 0
V
CE
= 10V, I
C
= 2mA
I
C
= 100mA, I
B
= 10mA
V
CB
= 10V, I
E
= –2mA, f = 200MHz
V
CE
= 10V, I
C
= 1mA, G
V
= 80dB
R
g
= 100kW , Function = FLAT
min
35
55
35
55
7
210
typ
200
max
0.1
1
650
1
150
Unit
m A
m A
V
V
V
V
MHz
mV
*
h
FE
Rank classification
Rank R S T
h
FE
210 ~ 340 290 ~ 460 360 ~ 650
2SD661
2SD661A
2SD661
2SD661A