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1998©
Document No. D14863EJ3V0DS00 (3rd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SD560
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
DATA SHEET
2002
The 2SD560 is a mold power transistor developed for low-
frequency power amplifiers and low-speed switching. This transistor is
ideal for direct driving from the IC output of devices such as pulse
motor drivers and relay drivers, and PC terminals.
FEATURES
• C-to-E reverse diode inserted
Low collector saturation voltage
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter Symbol Conditions Ratings Unit
Collector to base voltage VCBO 150 V
Collector to emitter voltage VCEO 100 V
Emitter to base voltage VEBO 7.0 V
Collector current (DC) IC(DC) ±5.0 A
Collector current (pulse) IC(pulse) PW ≤ 10 ms,
duty cycle ≤ 50%
±8.0 A
Base current (DC) IB(DC) 0.5 A
TC = 25°C 30 WTotal power dissipation PT
TA = 25°C 1.5 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
ORDERING INFORMATION
Ordering Name Package
2SD560 TO-220AB
(TO-220AB)
INTERNAL EQUIVALENT CIRCUIT
1. Base
2. Collector
3. Emitter